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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
April 2009
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8 Features
* RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A * Low gate charge ( Typ. 31nC) * Low Crss ( Typ. 15pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFET
TM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G
GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted*
o
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
FDP10N60ZU
FDPF10N60ZUT 600 30 9* 5.4* 36* 100 9 18 20
Units V V A A mJ A mJ V/ns
9 5.4 36
180 1.45 -55 to +150 300
42 0.3
W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient FDP10N60ZU FDPF10N60ZUT 0.7 0.5 62.5 3.0 62.5
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FDP10N60ZU/FDPF10N60ZUT Rev. A
1
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDP10N60ZU FDPF10N60ZUT Device FDP10N60ZU FDPF10N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = 30V, VDS = 0V 600 0.8 25 250 10 V V/oC A A
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A 3.0 0.65 12.5 5.0 0.8 V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 480V, ID = 10A VGS = 10V
(Note 4)
VDS = 25V, VGS = 0V f = 1MHz
-
1490 230 15 31 8 12
1980 240 25 40 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 10A RG = 25 , VGS = 10V
(Note 4)
-
25 40 95 60
60 90 200 130
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 10A VGS = 0V, ISD = 10A dIF/dt = 100A/s 45 52 9 36 1.6 A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FDP10N60ZU/FDPF10N60ZUT Rev. A
2
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
Figure 2. Transfer Characteristics
30
20
ID,Drain Current[A]
ID,Drain Current[A]
10
VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
20
25 C
o
o
10
150 C
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
* Notes : 1. VDS = 20V 2. 250s Pulse Test
1 1 10 VDS,Drain-Source Voltage[V]
20
1 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1.2 1.1 1.0 0.9
VGS = 10V
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(on) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
150 C
o
10
25 C
o
0.8
VGS = 20V
0.7
* Note : TJ = 25 C
o
Notes: 1. VGS = 0V
2. 250s Pulse Test
0.6 0 5 10 15 20 ID, Drain Current [A] 25 30
1 0.0
0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
3000 2500 Capacitances [pF] 2000
Ciss Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 150V VDS = 380V VDS = 400V
8
* Note: 1. VGS = 0V 2. f = 1MHz
6
1500 1000 500 0 0.1
4
2
* Note : ID = 10A
Crss
0
1 10 VDS, Drain-Source Voltage [V]
30
0
10 20 30 Qg, Total Gate Charge [nC]
40
FDP10N60ZU/FDPF10N60ZUT Rev. A
3
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperaure
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area - FDPF10N60ZUT
100
20s 100s
1.1
ID, Drain Current [A]
10
1ms 10ms
1.0
1
Operation in This Area is Limited by R DS(on)
DC
0.9
* Notes : 1. VGS = 0V 2. ID = 250A
0.1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000
Figure 9. Maximum Drain Current vs. Case Temperature
10
8 ID, Drain Current [A]
6
4
2
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT
5 Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
PDM t1 t2
0.1
0.02 0.01 Single pulse
* Notes : 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
-3
o
0.01 -4 10
10
10 10 1 10 Rectangular Pulse Duration [sec]
-2
-1
10
2
10
3
FDP10N60ZU/FDPF10N60ZUT Rev. A
4
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N60ZU/FDPF10N60ZUT Rev. A
5
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP10N60ZU/FDPF10N60ZUT Rev. A
6
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP10N60ZU/FDPF10N60ZUT Rev. A
7
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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP10N60ZU/FDPF10N60ZUT Rev. A
8
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM QFET Green FPSTM TinyBoostTM CROSSVOLTTM Green FPSTM e-SeriesTM QSTM TinyBuckTM CTLTM GmaxTM Quiet SeriesTM TinyLogic(R) Current Transfer LogicTM GTOTM RapidConfigureTM (R) TINYOPTOTM EcoSPARK IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* MICROCOUPLERTM SmartMaxTM TriFault DetectTM MicroFETTM SMART STARTTM TRUECURRENTTM* MicroPakTM SPM(R) (R) SerDesTM MillerDriveTM STEALTHTM Fairchild(R) MotionMaxTM SuperFETTM Fairchild Semiconductor(R) Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM UHC(R) OPTOLOGIC(R) SuperSOTTM-6 (R) FACT(R) OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM FlashWriter(R) * XSTM (R)* Power-SPMTM FPSTM
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP10N60ZU/FDPF10N60ZUT Rev. A
9
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